描述：RD100HHF1是一個專門MOS FET型晶體管專為HF高功率放大器的應(yīng)用
特性：高功率高增益：Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MH*率：60%typ.on HF 頻帶
應(yīng)用：對于輸出的高功率放大器階段HF頻帶移動無線sets
描述：RD100HHF1是一個專門MOS FET型晶體管專為HF高功率放大器的應(yīng)用
深圳浩時健電子有限公司是國內(nèi)三菱射頻電子元器件專業(yè)供應(yīng)商，三菱射頻產(chǎn)品廣泛應(yīng)用用于移動通信基站、直放站、衛(wèi)星通信、有線電視、雷達、無線本地環(huán)等領(lǐng)域。積極向國內(nèi)生產(chǎn)和科研單位*新產(chǎn)品：日本三菱公司生產(chǎn)的系列射頻功率放大模塊、系列射頻場效應(yīng)三極管。多年以來已為國內(nèi)眾多的生產(chǎn)廠家、科研院所、大專院校、國家重要單位維修部門的生產(chǎn)、維修、研制開發(fā)新品、教學實驗等提供了準確、快捷、方便的配套供貨服務(wù)。在經(jīng)營運作上,我公司批發(fā)、零售兼營，可向用戶*保證貨源，并保證供貨品種的技術(shù)指標滿足相關(guān)的檢測標準。
三菱（MITSUBISHI）:HF/VHF/UHF/900MHz（分立MOSFET管）
RD100HHF1、RD70HVF1、RD70HUF2、RD70HHF1、RD60HUF1、RD45HMF1、RD35HUF2、RD30HUF1、RD30HVF1、RD20HMF1、RD16HHF1、RD15HVF1、RD12MVP1、RD12MVS1、RD09MUP2、RD07MVS1B、RD07MVS1、RD07MVS2、RD07MUS2B、RD06HVF1、RD06HHF1、RD05MMP1、RD04HMS2、RD02MUS1、RD02MUS1B、RD02MUS2、RD01MUS1、RD02MUS2B、RD01MUS2、RD00HHS1、RD00HVS1等RD全系列。
三菱（MITSUBISHI）：（射頻功率放大模塊）
RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M、RA55H4452M、RA55H4047M、RA55H3847M、RA55H3340M、RA45H8994M1、RA45H7687M1、RA45H4452M、RA45H4047M、RA45H4045MR、RA35H1516M、RA33H1516M1、RA30H4552M1、RA30H4452M、RA30H4047M1、RA30H4047M、RA30H3340M、RA30H2127M、RA30H1721M、RA30H1317M1、RA30H1317M、RA30H0608M、RA20H8994M、RA20H8087M、RA18H1213G、RA13H8891MA、RA13H8891MB、RA13H4452M、RA13H4047M、RA13H3340M、RA13H1317M、RA08H1317M、RA08N1317M、RA07N4452M、RA07N4047M、RA07N3340M、RA07M4452MSA、RA07M4452M、RA07M4047MSA、RA07M4047M、RA07M3843M、RA07M3340M、RA07M2127M、RA07M1317MSA、RA07M1317M、RA07M0608M、RA07H4452M、RA07H4047M、RA07H3340M、RA07H0608M、RA06H8285M、RA05H9595M、RA05H8693M、RA03M9595M、RA03M8894M、RA03M8087M、RA03M4547MD、RA03M4043MD、RA03M3540MD、RA02M8087MD、RA01L9595M、RA01L8693MA等RA全系列。
本公司*經(jīng)營日本MITSUBISHI三菱全系列射頻功率放大模塊，保證*，*現(xiàn)貨，批號無鉛環(huán)保，假一罰十。深圳、香港公司備有大量現(xiàn)貨庫存，可提供樣品，現(xiàn)*熱賣中。
特性：高功率高增益：Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz高效率：60%typ.on HF 頻帶
應(yīng)用：對于輸出的高功率放大器階段HF頻帶移動無線sets
DESCRIPTION
RD100HHF1 is a MOS FET type transistor specifically
designed for HF High power amplifiers applications.
FEATURES
High power and High Gain:
Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz
High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band radio sets.
RD100HHF1 is a MOS FET type transistor specifically
designed for HF High power amplifiers applications.
FEATURES
High power and High Gain:
Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz
High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band radio sets.
