描述：RD06HHF1是一個(gè)專門MOS FET型晶體管專為HF RF功率放大器應(yīng)用.
特征：高功率增益：Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz
應(yīng)用：對(duì)于輸出的高功率放大器階段HF 頻帶移動(dòng)無(wú)線sets
描述：RD06HHF1是一個(gè)專門MOS FET型晶體管專為HF RF功率放大器應(yīng)用.
深圳浩時(shí)健電子有限公司是國(guó)內(nèi)三菱射頻電子元器件專業(yè)供應(yīng)商，三菱射頻產(chǎn)品廣泛應(yīng)用用于移動(dòng)通信基站、直放站、衛(wèi)星通信、有線電視、雷達(dá)、無(wú)線本地環(huán)等領(lǐng)域。積極向國(guó)內(nèi)生產(chǎn)和科研單位*新產(chǎn)品：日本三菱公司生產(chǎn)的系列射頻功率放大模塊、系列射頻場(chǎng)效應(yīng)三極管。多年以來(lái)已為國(guó)內(nèi)眾多的生產(chǎn)廠家、科研院所、大專院校、國(guó)家重要單位維修部門的生產(chǎn)、維修、研制開(kāi)發(fā)新品、教學(xué)實(shí)驗(yàn)等提供了準(zhǔn)確、快捷、方便的配套供貨服務(wù)。在經(jīng)營(yíng)運(yùn)作上,我公司批發(fā)、零售兼營(yíng)，可向用戶*保證貨源，并保證供貨品種的技術(shù)指標(biāo)滿足相關(guān)的檢測(cè)標(biāo)準(zhǔn)。
三菱（MITSUBISHI）:HF/VHF/UHF/900MHz（分立MOSFET管）
RD100HHF1、RD70HVF1、RD70HUF2、RD70HHF1、RD60HUF1、RD45HMF1、RD35HUF2、RD30HUF1、RD30HVF1、RD20HMF1、RD16HHF1、RD15HVF1、RD12MVP1、RD12MVS1、RD09MUP2、RD07MVS1B、RD07MVS1、RD07MVS2、RD07MUS2B、RD06HVF1、RD06HHF1、RD05MMP1、RD04HMS2、RD02MUS1、RD02MUS1B、RD02MUS2、RD01MUS1、RD02MUS2B、RD01MUS2、RD00HHS1、RD00HVS1等RD全系列。
三菱（MITSUBISHI）：（射頻功率放大模塊）
RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M、RA55H4452M、RA55H4047M、RA55H3847M、RA55H3340M、RA45H8994M1、RA45H7687M1、RA45H4452M、RA45H4047M、RA45H4045MR、RA35H1516M、RA33H1516M1、RA30H4552M1、RA30H4452M、RA30H4047M1、RA30H4047M、RA30H3340M、RA30H2127M、RA30H1721M、RA30H1317M1、RA30H1317M、RA30H0608M、RA20H8994M、RA20H8087M、RA18H1213G、RA13H8891MA、RA13H8891MB、RA13H4452M、RA13H4047M、RA13H3340M、RA13H1317M、RA08H1317M、RA08N1317M、RA07N4452M、RA07N4047M、RA07N3340M、RA07M4452MSA、RA07M4452M、RA07M4047MSA、RA07M4047M、RA07M3843M、RA07M3340M、RA07M2127M、RA07M1317MSA、RA07M1317M、RA07M0608M、RA07H4452M、RA07H4047M、RA07H3340M、RA07H0608M、RA06H8285M、RA05H9595M、RA05H8693M、RA03M9595M、RA03M8894M、RA03M8087M、RA03M4547MD、RA03M4043MD、RA03M3540MD、RA02M8087MD、RA01L9595M、RA01L8693MA等RA全系列。
本公司*經(jīng)營(yíng)日本MITSUBISHI三菱全系列射頻功率放大模塊，保證*，*現(xiàn)貨，批號(hào)無(wú)鉛環(huán)保，假一罰十。深圳、香港公司備有大量現(xiàn)貨庫(kù)存，可提供樣品，現(xiàn)*熱賣中。
特征：高功率增益：Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz
應(yīng)用：對(duì)于輸出的高功率放大器階段HF 頻帶移動(dòng)無(wú)線sets
RD06HHF1 is a MOS FET type transistor specifically
designed for HF RF power amplifiers applications.
FEATURES
High power gain:
Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz
APPLICATION
For output stage of high power amplifiers in
HF band radio sets.
RoHS COMPLIANT
RD06HHF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the lot
marking.
This product include the lead in high melting temperaturetype solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders（i.e.tin-lead solder alloys containing more than85% lead
designed for HF RF power amplifiers applications.
FEATURES
High power gain:
Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz
APPLICATION
For output stage of high power amplifiers in
HF band radio sets.
RoHS COMPLIANT
RD06HHF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the lot
marking.
This product include the lead in high melting temperaturetype solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders（i.e.tin-lead solder alloys containing more than85% lead
