RA55H3847M是55-watt RF MOSFET放大器在12.5-volt操作380-范圍470-MHz移動無線電模塊.電池可以直接連接到漏增強型MOSFET晶體管.沒有門電壓（VGG到只有一小漏電流流動=0V）,排水和的RF輸入信號衰減到60 dB.柵極電壓增加輸出功率和漏電流增加.與周圍4V（zui?。?輸出的柵極電壓電源和排水電流大幅增加.標稱輸出功率在4.5V（典型值）和5V（zui大值）.在VGG=5V,典型門電流的是1 mA.該模塊設計用于非線性調(diào)頻調(diào)制,但也可用于線性調(diào)制通過設置靜態(tài)漏電流柵極電壓控制輸出功率與輸入功率.
特點
•增強型MOSFET晶體管（IDD≅0@ VDD=12.5V, VGG=0V）
• Pout>55W,ηT>38% @ VDD=12.5V, VGG=5V, Pin=50mW
•寬帶頻率范圍：380-470MHz
•低功耗控制電流 IGG=1mA （typ）在VGG=5V
•模塊尺寸：66 x 21 x 9.88 mm
•線性操作可以通過設置靜態(tài)漏電流與柵極電壓和輸出功率控制與輸入功率
RoHS遵守
• RA55H3847M-101是RoHS符合要求的產(chǎn)品.
• RoHS遵守的地段標記后表明信“G”的.
•此產(chǎn)品包括電子部件的玻璃中的鉛和電子陶瓷部件中的鉛.然而,這是適用RoHS以下例外方向.在陰極射線管,電子零件,玻璃 ,1.Lead熒光燈管.2.Lead在電子陶瓷零件.
RA55H3847M：Silicon RF Power Modules RoHS Compliance , 380-470MHz 55W 12.5V, 3 Stage Amp. For RADIO
DESCRIPTION
The RA55H3847M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt radios that operate in the 380- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage （VGG=0V）, only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V （minimum）, output power and drain current increases substantially.The nominal output power becomes available at 4.5V （typical） and 5V （maximum）. At VGG=5V, the typical gate current is 1 mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
The RA55H3847M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt radios that operate in the 380- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage （VGG=0V）, only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V （minimum）, output power and drain current increases substantially.The nominal output power becomes available at 4.5V （typical） and 5V （maximum）. At VGG=5V, the typical gate current is 1 mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement- Mode MOSFET Transistors（IDD≅0 @ VDD=12.5V, VGG=0V）
• Pout>55W, ηT>38% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 380-470MHz
• Low-Power Control Current IGG=1mA （typ） at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power RoHS COMPLIANCE
• RA55H3847M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
• Enhancement- Mode MOSFET Transistors（IDD≅0 @ VDD=12.5V, VGG=0V）
• Pout>55W, ηT>38% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 380-470MHz
• Low-Power Control Current IGG=1mA （typ） at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power RoHS COMPLIANCE
• RA55H3847M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
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