該RA30H4452M是30-watt RF的MOSFET放大器模塊12.5-volt移動電臺在向工作在440-520-MHz范圍.電池可以直接連接到漏極增強型MOSFET晶體管.如果沒有門電壓（VGG進入=0V）,只有一小漏電流排水和輸入信號衰減的RF高達60 dB.輸出功率和漏電流增加門極電壓上升.與周圍4V（zui低），輸出功率和電壓門漏電流大幅增加.額定輸出功率變在4.5V（典型值）和5V（zui大）提供.在VGG=5V,的典型柵極電流1 mA.該模塊是專為非線性調頻調制，但可能也可用于線性調制通過設置靜態(tài)漏電流隨柵極電壓和輸出功率控制輸入功率.
深圳浩時健電子有限公司是國內三菱射頻電子元器件專業(yè)供應商，三菱射頻產品廣泛應用用于移動通信基站、直放站、衛(wèi)星通信、有線電視、雷達、無線本地環(huán)等領域。積極向國內生產和科研單位*新產品：日本三菱公司生產的系列射頻功率放大模塊、系列射頻場效應三極管。多年以來已為國內眾多的生產廠家、科研院所、大專院校、國家重要單位維修部門的生產、維修、研制開發(fā)新品、教學實驗等提供了準確、快捷、方便的配套供貨服務。在經營運作上,我公司批發(fā)、零售兼營，可向用戶*保證貨源，并保證供貨品種的技術指標滿足相關的檢測標準。
三菱（MITSUBISHI）:HF/VHF/UHF/900MHz（分立MOSFET管）
RD100HHF1、RD70HVF1、RD70HUF2、RD70HHF1、RD60HUF1、RD45HMF1、RD35HUF2、RD30HUF1、RD30HVF1、RD20HMF1、RD16HHF1、RD15HVF1、RD12MVP1、RD12MVS1、RD09MUP2、RD07MVS1B、RD07MVS1、RD07MVS2、RD07MUS2B、RD06HVF1、RD06HHF1、RD05MMP1、RD04HMS2、RD02MUS1、RD02MUS1B、RD02MUS2、RD01MUS1、RD02MUS2B、RD01MUS2、RD00HHS1、RD00HVS1等RD全系列。
三菱（MITSUBISHI）：（射頻功率放大模塊）
RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M、RA55H4452M、RA55H4047M、RA55H3847M、RA55H3340M、RA45H8994M1、RA45H7687M1、RA45H4452M、RA45H4047M、RA45H4045MR、RA35H1516M、RA33H1516M1、RA30H4552M1、RA30H4452M、RA30H4047M1、RA30H4047M、RA30H3340M、RA30H2127M、RA30H1721M、RA30H1317M1、RA30H1317M、RA30H0608M、RA20H8994M、RA20H8087M、RA18H1213G、RA13H8891MA、RA13H8891MB、RA13H4452M、RA13H4047M、RA13H3340M、RA13H1317M、RA08H1317M、RA08N1317M、RA07N4452M、RA07N4047M、RA07N3340M、RA07M4452MSA、RA07M4452M、RA07M4047MSA、RA07M4047M、RA07M3843M、RA07M3340M、RA07M2127M、RA07M1317MSA、RA07M1317M、RA07M0608M、RA07H4452M、RA07H4047M、RA07H3340M、RA07H0608M、RA06H8285M、RA05H9595M、RA05H8693M、RA03M9595M、RA03M8894M、RA03M8087M、RA03M4547MD、RA03M4043MD、RA03M3540MD、RA02M8087MD、RA01L9595M、RA01L8693MA等RA全系列。
本公司*經營日本MITSUBISHI三菱全系列射頻功率放大模塊，保證*，*現(xiàn)貨，批號無鉛環(huán)保，假一罰十。深圳、香港公司備有大量現(xiàn)貨庫存，可提供樣品，現(xiàn)*熱賣中。
特征
•增強型MOSFET晶體管（IDD≅0@ VDD=12.5V, VGG=0V）
• Pout>30W,ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
•寬帶頻率范圍：440-520MHz
•低功耗控制電流IGG=1mA （typ）在VGG=5V
• 66 x 21 x 9.8 mm
•線性操作有可能通過設置靜態(tài)漏電流隨柵極電壓和輸出功率控制與輸入功率
