RA60H1317M是60-watt RF的MOSFET放大器模塊12.5-volt移動電臺在向工作在135-175-MHz范圍.電池可以直接連接到漏極增強型MOSFET晶體管.如果沒有門電壓（VGG進入=0V）,只有一小漏電流排水和輸入信號衰減的RF高達60 dB.輸出功率和漏電流增加門極電壓上升.與周圍4V（zui低），輸出功率和電壓門漏電流大幅增加.額定輸出功率變在4.5V（典型值）和5V（zui大）提供.在VGG=5V,的典型柵極電流1 mA.該模塊是專為非線性調頻調制，但可能也可用于線性調制通過設置靜態(tài)漏電流隨柵極電壓和輸出功率控制輸入功率.
特征
•增強型MOSFET晶體管（IDD≅0@ VDD=12.5V, VGG=0V）
• Pout>60W,ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
•寬帶頻率范圍：135-175MHz
•低功耗控制電流IGG=1mA （typ）在VGG=5V
•模塊尺寸：66 x 21 x 9.88 mm
•線性操作有可能通過設置靜態(tài)漏電流隨柵極電壓和輸出功率控制與輸入功率
RA60H1317M1A:Silicon RF Power Modules RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For RADIO
DESCRIPTION
The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt radios that operate in the 136- to 174-MHz range.The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V （minimum）, output power and drain current increases substantially. The nominal output power becomes available at 4.5V （typical） and 5V （maximum）.At VGG=5V, the typical gate current is 1 mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt radios that operate in the 136- to 174-MHz range.The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V （minimum）, output power and drain current increases substantially. The nominal output power becomes available at 4.5V （typical） and 5V （maximum）.At VGG=5V, the typical gate current is 1 mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors（IDD?0 @ VDD=12.5V, VGG=0V）
• Pout>60W, ?T>45% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 136-174MHz
• Low-Power Control Current IGG=1mA （typ） at VGG=5V
• Module Size: 67 x 19.4 x 9.9 mm RoHS COMPLIANCE
• RA60H1317M1A-201 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.However ,it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
• Enhancement-Mode MOSFET Transistors（IDD?0 @ VDD=12.5V, VGG=0V）
• Pout>60W, ?T>45% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 136-174MHz
• Low-Power Control Current IGG=1mA （typ） at VGG=5V
• Module Size: 67 x 19.4 x 9.9 mm RoHS COMPLIANCE
• RA60H1317M1A-201 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.However ,it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER:RA60H1317M1A-201
SUPPLY FORM:Antistatic tray,10 modules/tray
深圳浩時健電子有限公司是國內三菱射頻電子元器件專業(yè)供應商，三菱射頻產品廣泛應用用于移動通信基站、直放站、衛(wèi)星通信、有線電視、雷達、無線本地環(huán)等領域。積極向國內生產和科研單位*新產品：日本三菱公司生產的系列射頻功率放大模塊、系列射頻場效應三極管。多年以來已為國內眾多的生產廠家、科研院所、大專院校、國家重要單位維修部門的生產、維修、研制開發(fā)新品、教學實驗等提供了準確、快捷、方便的配套供貨服務。在經營運作上,我公司批發(fā)、零售兼營，可向用戶*保證貨源，并保證供貨品種的技術指標滿足相關的檢測標準。
三菱（MITSUBISHI）:HF/VHF/UHF/900MHz（分立MOSFET管）
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三菱（MITSUBISHI）：（射頻功率放大模塊）
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