RA60H4452M1是60-watt RF的MOSFET放大器模塊12.5-volt移動電臺在向工作在440-520-MHz范圍.電池可以直接連接到漏極增強型MOSFET晶體管.如果沒有門電壓（VGG進入=0V）,只有一小漏電流漏極和標(biāo)稱輸出信號（Pout
=60W）衰減到60 dB.輸出功率和漏電流增加為柵極電壓升高.輸出功率和漏電流大幅增加，與周圍0V（zui低）柵電壓.額定輸出功率變?yōu)榭捎脿顟B(tài)，在VGG是4V（典型值），5V（zui大）.在VGG=5V,的典型柵極電流5mA.This模塊設(shè)計用于非線性調(diào)頻調(diào)制，但也可以用于線性調(diào)制通過設(shè)置靜態(tài)漏電流與柵極電壓和控制輸入與輸出功率權(quán)力.
特征
•增強型MOSFET晶體管（IDD≅0@ VDD=12.5V, VGG=0V）
• Pout>60W,ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
•寬帶頻率范圍：440-520MHz
•金屬屏蔽結(jié)構(gòu)，使得虛假的改進輻射簡單
•低功耗控制電流IGG=5mA （typ） @ VGG=5V
•模塊尺寸：67 x 18 x 9.9 mm
•線性操作有可能通過設(shè)置靜態(tài)漏目前同門電壓和輸出功率控制與輸入功率
RA60H4452M1:Silicon RF Power Modules RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For RADIO
DESCRIPTION
The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt radios that operate in the 440- to 520-MHz range.The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage （VGG=0V）, only a small leakage current flows into the drain and the nominal output signal （Pout=60W） attenuates up to 60 dB.
The output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V（minimum）.
The nominal output power becomes available at the state that VGG is 4V （typical） and 5V （maximum）.At VGG=5V, the typical gate currents are 5mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt radios that operate in the 440- to 520-MHz range.The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage （VGG=0V）, only a small leakage current flows into the drain and the nominal output signal （Pout=60W） attenuates up to 60 dB.
The output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V（minimum）.
The nominal output power becomes available at the state that VGG is 4V （typical） and 5V （maximum）.At VGG=5V, the typical gate currents are 5mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors（IDD?0 @ VDD=12.5V, VGG=0V）
• Pout>60W, ?T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 440-520MHz
• Metal shield structure that makes the improvements of spurious radiation simple
• Low-Power Control Current IGG=5mA （typ） @ VGG=5V
• Module Size: 67 x 19.4 x 9.9 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power. RoHS COMPLIANCE
• RA60H4452M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
• Enhancement-Mode MOSFET Transistors（IDD?0 @ VDD=12.5V, VGG=0V）
• Pout>60W, ?T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 440-520MHz
• Metal shield structure that makes the improvements of spurious radiation simple
• Low-Power Control Current IGG=5mA （typ） @ VGG=5V
• Module Size: 67 x 19.4 x 9.9 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power. RoHS COMPLIANCE
• RA60H4452M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER:RA60H4452M1-101
SUPPLY FORM:Antistatic tray,10 modules/tray
深圳浩時健電子有限公司是國內(nèi)三菱射頻電子元器件專業(yè)供應(yīng)商，三菱射頻產(chǎn)品廣泛應(yīng)用用于移動通信基站、直放站、衛(wèi)星通信、有線電視、雷達、無線本地環(huán)等領(lǐng)域。積極向國內(nèi)生產(chǎn)和科研單位*新產(chǎn)品：日本三菱公司生產(chǎn)的系列射頻功率放大模塊、系列射頻場效應(yīng)三極管。多年以來已為國內(nèi)眾多的生產(chǎn)廠家、科研院所、大專院校、國家重要單位維修部門的生產(chǎn)、維修、研制開發(fā)新品、教學(xué)實驗等提供了準(zhǔn)確、快捷、方便的配套供貨服務(wù)。在經(jīng)營運作上,我公司批發(fā)、零售兼營，可向用戶*保證貨源，并保證供貨品種的技術(shù)指標(biāo)滿足相關(guān)的檢測標(biāo)準(zhǔn)。
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三菱（MITSUBISHI）：（射頻功率放大模塊）
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