深圳浩時(shí)健電子有限公司是國(guó)內(nèi)三菱射頻電子元器件專業(yè)供應(yīng)商，三菱射頻產(chǎn)品廣泛應(yīng)用用于移動(dòng)通信基站、直放站、衛(wèi)星通信、有線電視、雷達(dá)、無線本地環(huán)等領(lǐng)域。積極向國(guó)內(nèi)生產(chǎn)和科研單位*新產(chǎn)品：日本三菱公司生產(chǎn)的系列射頻功率放大模塊、系列射頻場(chǎng)效應(yīng)三極管。多年以來已為國(guó)內(nèi)眾多的生產(chǎn)廠家、科研院所、大專院校、國(guó)家重要單位維修部門的生產(chǎn)、維修、研制開發(fā)新品、教學(xué)實(shí)驗(yàn)等提供了準(zhǔn)確、快捷、方便的配套供貨服務(wù)。在經(jīng)營(yíng)運(yùn)作上,我公司批發(fā)、零售兼營(yíng)，可向用戶*保證貨源，并保證供貨品種的技術(shù)指標(biāo)滿足相關(guān)的檢測(cè)標(biāo)準(zhǔn)。
三菱（MITSUBISHI）:HF/VHF/UHF/900MHz（分立MOSFET管）
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三菱（MITSUBISHI）：（射頻功率放大模塊）
RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M、RA55H4452M、RA55H4047M、RA55H3847M、RA55H3340M、RA45H8994M1、RA45H7687M1、RA45H4452M、RA45H4047M、RA45H4045MR、RA35H1516M、RA33H1516M1、RA30H4552M1、RA30H4452M、RA30H4047M1、RA30H4047M、RA30H3340M、RA30H2127M、RA30H1721M、RA30H1317M1、RA30H1317M、RA30H0608M、RA20H8994M、RA20H8087M、RA18H1213G、RA13H8891MA、RA13H8891MB、RA13H4452M、RA13H4047M、RA13H3340M、RA13H1317M、RA08H1317M、RA08N1317M、RA07N4452M、RA07N4047M、RA07N3340M、RA07M4452MSA、RA07M4452M、RA07M4047MSA、RA07M4047M、RA07M3843M、RA07M3340M、RA07M2127M、RA07M1317MSA、RA07M1317M、RA07M0608M、RA07H4452M、RA07H4047M、RA07H3340M、RA07H0608M、RA06H8285M、RA05H9595M、RA05H8693M、RA03M9595M、RA03M8894M、RA03M8087M、RA03M4547MD、RA03M4043MD、RA03M3540MD、RA02M8087MD、RA01L9595M、RA01L8693MA等RA全系列。
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MITSUBISHI RF MOSFET MODULE RA03M8894M RoHS Compliance , 889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO
RA03M8894M MITSUBISHI PACKAGE CODE: H46S
1 RF Input （Pin）
2 Gate Voltage （VGG）, Power Control
3 Drain Voltage （VDD）, Battery
4 RF Output （Pout）
5 RF Ground （Case） BLOCK DIAGRAM 3 2451
The RA03M8894M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 889- to 941-MHz range. The battery can be connected directly to the drain of the enhancement-modeMOSFET transistors. Without the gate voltage （VGG=0V）, only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V （minimum）, output power and drain current increases substantially. The nominal output power becomes available at 3V （typical） and 3.5V （maximum）. At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors （IDD≅0 @ VDD=7.2V, VGG=0V）
• Pout>3.6W @ VDD=7.2V, VGG=3.5V, Pin=50mW
• ηT>32% @ Pout=3W （VGGcontrol）, VDD=7.2V, Pin=50mW
• Broadband Frequency Range: 889-941MHz
• Low-Power Control Current IGG=1mA （typ） at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power RoHS COMPLIANT
• RA03M8894M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
