深圳浩時(shí)健電子有限公司是國(guó)內(nèi)三菱射頻電子元器件專(zhuān)業(yè)供應(yīng)商,三菱射頻產(chǎn)品廣泛應(yīng)用用于移動(dòng)通信基站、直放站、衛(wèi)星通信、有線電視、雷達(dá)、無(wú)線本地環(huán)等領(lǐng)域。積極向國(guó)內(nèi)生產(chǎn)和科研單位*新產(chǎn)品:日本三菱公司生產(chǎn)的系列射頻功率放大模塊、系列射頻場(chǎng)效應(yīng)三極管。多年以來(lái)已為國(guó)內(nèi)眾多的生產(chǎn)廠家、科研院所、大專(zhuān)院校、國(guó)家重要單位維修部門(mén)的生產(chǎn)、維修、研制開(kāi)發(fā)新品、教學(xué)實(shí)驗(yàn)等提供了準(zhǔn)確、快捷、方便的配套供貨服務(wù)。在經(jīng)營(yíng)運(yùn)作上,我公司批發(fā)、零售兼營(yíng),可向用戶(hù)*保證貨源,并保證供貨品種的技術(shù)指標(biāo)滿(mǎn)足相關(guān)的檢測(cè)標(biāo)準(zhǔn)。
三菱(MITSUBISHI):HF/VHF/UHF/900MHz(分立MOSFET管)
RD100HHF1、RD70HVF1、RD70HUF2、RD70HHF1、RD60HUF1、RD45HMF1、RD35HUF2、RD30HUF1、RD30HVF1、RD20HMF1、RD16HHF1、RD15HVF1、RD12MVP1、RD12MVS1、RD09MUP2、RD07MVS1B、RD07MVS1、RD07MVS2、RD07MUS2B、RD06HVF1、RD06HHF1、RD05MMP1、RD04HMS2、RD02MUS1、RD02MUS1B、RD02MUS2、RD01MUS1、RD02MUS2B、RD01MUS2、RD00HHS1、RD00HVS1等RD全系列。
三菱(MITSUBISHI):(射頻功率放大模塊)
RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M、RA55H4452M、RA55H4047M、RA55H3847M、RA55H3340M、RA45H8994M1、RA45H7687M1、RA45H4452M、RA45H4047M、RA45H4045MR、RA35H1516M、RA33H1516M1、RA30H4552M1、RA30H4452M、RA30H4047M1、RA30H4047M、RA30H3340M、RA30H2127M、RA30H1721M、RA30H1317M1、RA30H1317M、RA30H0608M、RA20H8994M、RA20H8087M、RA18H1213G、RA13H8891MA、RA13H8891MB、RA13H4452M、RA13H4047M、RA13H3340M、RA13H1317M、RA08H1317M、RA08N1317M、RA07N4452M、RA07N4047M、RA07N3340M、RA07M4452MSA、RA07M4452M、RA07M4047MSA、RA07M4047M、RA07M3843M、RA07M3340M、RA07M2127M、RA07M1317MSA、RA07M1317M、RA07M0608M、RA07H4452M、RA07H4047M、RA07H3340M、RA07H0608M、RA06H8285M、RA05H9595M、RA05H8693M、RA03M9595M、RA03M8894M、RA03M8087M、RA03M4547MD、RA03M4043MD、RA03M3540MD、RA02M8087MD、RA01L9595M、RA01L8693MA等RA全系列。
本公司*經(jīng)營(yíng)日本MITSUBISHI三菱全系列射頻功率放大模塊,保證*,*現(xiàn)貨,批號(hào)無(wú)鉛環(huán)保,假一罰十。深圳、香港公司備有大量現(xiàn)貨庫(kù)存,可提供樣品,現(xiàn)*熱賣(mài)中。
該RA45H4452M是45-watt RF的MOSFET放大器模塊12.5-volt移動(dòng)電臺(tái)在向工作在440-520-MHz范圍.電池可以直接連接到漏極增強(qiáng)型MOSFET晶體管.如果沒(méi)有門(mén)電壓(VGG進(jìn)入=0V),只有一小漏電流排水和輸入信號(hào)衰減的RF高達(dá)60 dB.輸出功率和漏電流增加門(mén)極電壓上升.與周?chē)?V(zui低),輸出功率和電壓門(mén)漏電流大幅增加.額定輸出功率變?cè)?.5V(典型值)和5V(zui大)提供.在VGG=5V,的典型柵極電流1 mA.該模塊是專(zhuān)為非線性調(diào)頻調(diào)制,但可能也可用于線性調(diào)制通過(guò)設(shè)置靜態(tài)漏電流隨柵極電壓和輸出功率控制與輸入功率.
特征
•增強(qiáng)型MOSFET晶體管(IDD≅0@ VDD=12.5V, VGG=0V)
• Pout>45W,ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW
•寬帶頻率范圍:440-520MHz
•低功耗控制電流IGG=1mA (typ)在VGG=5V
•模塊尺寸:66 x 21 x 9.88 mm
•線性操作有可能通過(guò)設(shè)置靜態(tài)漏電流隨柵極電壓和輸出功率控制與輸入功率