該RA30H2127M是30-watt RF的MOSFET放大器模塊for 12.5-volt,在210-經(jīng)營移動(dòng)收音機(jī)270-MHz范圍.電池可以直接連接到漏極增強(qiáng)型MOSFET晶體管.如果沒有門電壓(VGG進(jìn)排水=0V),只是一個(gè)很小的泄漏電流與輸入信號(hào)衰減的RF高達(dá)60 dB.輸出功率作為柵極和漏極電壓增加電流增加.隨著gate voltage around 4V (minimum), output power and drain current大幅增加.額定輸出功率變?yōu)?/span>可在4.5V(典型值)和5V(zui大).在VGG=5V,典型柵極電流1 mA.該模塊是專為非線性調(diào)頻調(diào)制,但可能也可用于線性調(diào)制通過設(shè)置靜態(tài)漏電流隨柵極電壓和輸出功率控制輸入功率.
特征
The RA30H2127M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt radios that operate in the 210- to 270-MHz range.The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
• Enhancement-Mode MOSFET Transistors(IDD?0 @ VDD=12.5V, VGG=0V)
• Pout>30W, ?T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 210-270MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power RoHS COMPLIANCE
• RA30H2127M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
三菱(MITSUBISHI):HF/VHF/UHF/900MHz(分立MOSFET管)
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