M5512 GDDR7 Memory Test System
ATE-on-Bench for GDDR7 Characterization and Test
GDDR7 Memory Test System
M5512 GDDR7 Memory Test System
BENEFITS
Fastest time to market: perform deep memory read/write operations and characterize electrical and timing specifications
Most capable PAM3 signaling: leveraging years of expertise in SerDes technology, the PAM3 pin-electronics exceed the requirements of the GDDR7 specifications
Automated: scripting capability ideal for debug tasks, verification, and full‐fledged production screening of devices and system boards
M5512 GDDR7內(nèi)存測試系統(tǒng)
用于GDDR7表征和測試的臺架ATE
利益
上市時間：執(zhí)行深度內(nèi)存讀/寫操作，并確定電氣和時序規(guī)格
強(qiáng)大的PAM3信號：利用SerDes技術(shù)多年的專業(yè)知識，PAM3引腳電子器件超過了GDDR7規(guī)范的要求
自動化：腳本功能非常適合調(diào)試任務(wù)、驗證以及設(shè)備和系統(tǒng)板的全面生產(chǎn)篩選
