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項(xiàng)目 | 內(nèi)容 | 規(guī)格概述 |
1 | 波長(zhǎng)范圍 | 420~1000nm |
2 | Resolution | 1 nm |
3 | 膜厚測(cè)定范圍 | 250 A- 20 um |
4 | 膜厚測(cè)定精度 | T=±5A, N=±0.02 based on SiO2 1100A standard wafer |
5 | 膜厚測(cè)定重復(fù)性 | SR Thickness repeatability: ≤ 1? (1?) (at 1100?, SiO2/Si) |
6 | 測(cè)定光源 | 鹵素?zé)襞?/span>(含 Constant Current Power Supply) |
7 | 透明基板里面反射補(bǔ)正機(jī)能 | 包括透明基板背后反射的修正(軟件) |
8 | 測(cè)定SPOT徑(Spot Size ) | 50 um Diameter ( 20 X Objective ) , can be smaller with less signal / noise ratio |
9 | Tact time | 2S(測(cè)試1S+分析1S) |