IG2型離子源 / 氬槍
典型應(yīng)用是氬離子濺射清洗表面(中科院物理所配置多套IG2型離子源)
濺射清洗 /表面準(zhǔn)備，用于表面科學(xué)， MBE ，高真空濺射過(guò)程
離子輔助沉積
離子束濺射鍍膜
反應(yīng)離子刻蝕
IG2 2kV BackfillIon Source and Control
RBD Instruments’IG2 Ion Source Package is the ideal solution for sputter cleaning of samplesunder UHV conditions. The IG2 Ion Source Package consists of the Model 04-165 2kV Backfill Ion Source ａnd the Model 32-165 Ion Source Control. Theseunits are interchangeable with the PHI® 04-161 and 04-162 ion guns and the PHI®20-045 control, respectively.
The Model 1401 Ion Gunis ideal for use insurface chemistry experiments such as sample preparation and depth profilingwith Auger and XPS. It can be used with most inert gasses.
The Model1407 IonGunfeatures Duoplasmatron performance in an electron impact ionization ion gun.By means of changeable apertures in the optics column, a wide range of beamcurrents and spot sizes may be obtained. At a beam energy of 5 keV,beam current may be adjusted from 2 uA into a 20 um diameter spot to 20 uA intoa 100 um diameter spot.
The Model 1402 IonGunfeatures hieam currents at very low beam energies. It also may beoperated at hieam energies (up to 3 keV) to provide additional depthprofiling and sample cleaning capability
3 kV Ion Source Package
RBD is nowproviding a 3 kV ion source sputter package that comprises an electrondischarge source, power supply, and cable. Designed to operate as low as 100eV, the 3 kV ion source provides a large 10 mm spot size and is compatible withall inert gasses and does not require differential pumping.
The packageincludes ion source, electronic control unit, sample current meter, cabling,operating manual and a spare filament assembly.
高性?xún)r(jià)比
