BATOP激光芯片1064nm(Microchip)
品牌: BATOP
型號: MCT-1064-220ps
BATOP GmbH成立于2003年,是一家隸屬于德國耶拿大學(xué)的私人創(chuàng)新型公司。BATOP從事的專業(yè)領(lǐng)域包括:低溫分子束外延技術(shù),介質(zhì)濺射鍍膜,晶圓加工和芯片安裝技術(shù)。在過去幾年里, BATOP 已成為一個(gè)用于被動鎖模激光器的可飽和吸收體的供應(yīng)商。可飽和吸收產(chǎn)品集合了各式各樣的不同的器件,從可飽和吸收鏡(SAM?),到可飽和輸出鏡(SOC)和用于透過應(yīng)用的可飽和吸收體(SA)。迄今為止,可飽和吸收產(chǎn)品已經(jīng)覆蓋了800nm到2.6μm的常用激光波長范圍。另一個(gè)產(chǎn)品系列是用于太赫茲發(fā)射和探測的太赫茲光電導(dǎo)天線(PCA)。BATOP不僅提供單帶隙天線,還包括整合了微透鏡的高能大狹縫交叉天線陣列和整套的太赫茲光譜儀。 太赫茲光電導(dǎo)天線的激發(fā)波長為800nm到1550nm之間。BATOP借助強(qiáng)大的研發(fā)能力來不斷提高自己的產(chǎn)品, 我們始終和客戶在一起,好的滿足他們的需求。
產(chǎn)品介紹
應(yīng)用范圍:
- 微加工
- 光探測和測距(激光雷達(dá))
- 精密測量
- 頻率轉(zhuǎn)換
MCT – 傳輸模式微芯片(Microchip in transmission mode)
- The Nd:YVO4 laser crystal is bonded with a saturable output coupler (SOC).
- The laser output beam is in the same direction as the pump beam.
- The laser output is linear polarized.
Part No. | Delivery time | Description | |
MCT-1064-90ps | 1 week | Microchip in transmission mode | |
MCT-1064-220ps | 1 week | Microchip in transmission mode |
The Microchip (MC) consists of a saturable absorber mirror bonded with a Nd:YVO4 laser crystal. The MC can be used to generate pulsed laser radiation at 1064 nm wavelength if pumped with a pump diode at 808 nm. Possible application areas of this laser radiation are:
- ? micromachining
- ? light detection and ranging (LIDAR)
- ? precision measurements
- ? frequency conversion
The main advantage of a laser build with this microchip is the pump power dependent repetition rate with fixed pulse duration and pulse energy. By simply increasing the pump power at 808 nm the repetition rate - and consequently the average output power - will be increased proportionally starting
from the laser threshold.
Parameter at T=25°C | Min. | Typ. | Max. |
Wavelength | 806 nm | 808 nm | 810 nm |
Optical Pump Power Pp | 70 mW | 150 mW-200 mW | 300 mW |
Pump Spot Diameter | 25 μm | 40 μm | 60 μm |
Fluorescent Lifetime | 55 μs (2%) | ||
Pump Absorption @ 808nm | 93% | 95% | 99,5% |
Pump Power Density | 5.5 KW/cm2 | 24 KW/cm2* |
Parameter at T=25°C | Min. | Typ. | Max. |
Laser Emission Wavelength | 1064.0nm | 1064.3nm | 1064.6nm |
Laser Wavelength Drift | 28 pm/100mW** | ||
Beam Waist Diameter | 40 μm | 100 μm | |
M2 | 1.1 | 1.3 | 1.5 |
Pulse Energy (PPump=150mW) | 150 nJ | 160 nJ | 180 nJ |
Pulse Duration | 200 ps | 220 ps | 250 ps |
Differential Efficiency | 15% | 25%-30% | 40% |
Lasing Threshold | 55 mW | 70 mW | 85 mW |
Polarization Extinction Ratio | 30 | ||
frep | 20 kHz | 400 kHz | |
Pp (150mW) | 13 mW | 17 mW | 21 mW |
Pp (200mW) | 22 mW | 27 mW | 32 mW |
- Microchip激光芯片1064nm