BATOP激光芯片1064nm(Microchip)
品牌: BATOP
型號(hào): MCT-1064-90ps
BATOP激光芯片1064nm(Microchip)
品牌: BATOP
型號(hào): MCT-1064-90ps
BATOP GmbH成立于2003年,是一家隸屬于德國(guó)耶拿大學(xué)的私人創(chuàng)新型公司。BATOP從事的專業(yè)領(lǐng)域包括:低溫分子束外延技術(shù),介質(zhì)濺射鍍膜,晶圓加工和芯片安裝技術(shù)。在過去幾年里, BATOP 已成為一個(gè)用于被動(dòng)鎖模激光器的可飽和吸收體的供應(yīng)商??娠柡臀债a(chǎn)品集合了各式各樣的不同的器件,從可飽和吸收鏡(SAM?),到可飽和輸出鏡(SOC)和用于透過應(yīng)用的可飽和吸收體(SA)。迄今為止,可飽和吸收產(chǎn)品已經(jīng)覆蓋了800nm到2.6μm的常用激光波長(zhǎng)范圍。另一個(gè)產(chǎn)品系列是用于太赫茲發(fā)射和探測(cè)的太赫茲光電導(dǎo)天線(PCA)。BATOP不僅提供單帶隙天線,還包括整合了微透鏡的高能大狹縫交叉天線陣列和整套的太赫茲光譜儀。 太赫茲光電導(dǎo)天線的激發(fā)波長(zhǎng)為800nm到1550nm之間。BATOP借助強(qiáng)大的研發(fā)能力來(lái)不斷提高自己的產(chǎn)品, 我們始終和客戶在一起,好的滿足他們的需求。
產(chǎn)品介紹
Microchip激光芯片1064nm
The Microchip (MC) consists of a saturable absorber bonded with a Nd:YVO4 laser crystal. It can be used to generate pulsed laser radiation at 1064 nm wavelength if pumped with a diode laser at 808 nm using passively Q-switching.
The main advantage of a laser build with a microchip is the pump power dependent repetition rate with fixed pulse duration and pulse energy. By simply increasing the pump power at 808 nm the repetition rate - and consequently the average output power - will be increased proportionally starting from the laser threshold. The laser output is linear polarized.
- MC - Microchip in reflection mode
- MCT - Microchip in transmission mode
應(yīng)用領(lǐng)域
- 微加工
- 光探測(cè)和測(cè)距(激光雷達(dá))
- 精密測(cè)量
- 頻率轉(zhuǎn)換
MCT – 傳輸模式微芯片
- The Nd:YVO4 laser crystal is bonded with a saturable output coupler (SOC).
- The laser output beam is in the same direction as the pump beam.
- The laser output is linear polarized.
Part No. | Delivery time | Description |
MCT-1064-90ps | 1 week | Microchip in transmission mode |
MCT-1064-220ps | 1 week | Microchip in transmission mode |
Parameter at T=25°C | Min. | Typ. | Max. |
Wavelength | 806 nm | 808 nm | 810 nm |
Optical Pump Power Pp | 70 mW | 150 mW-200 mW | 300 mW |
Pump Spot Diameter | 25 μm | 40 μm | 100 μm |
Fluorescent Lifetime | 35 μs (3%) | ||
Pump Absorption @ 808nm | 85% | 90% | 97,5% |
Pump Power Density | 5.5 KW/cm2 | 24 KW/cm2* |
Parameter at T=25°C | Min. | Typ. | Max. |
Laser Emission Wavelength | 1064.0nm | 1064.3nm | 1064.6nm |
Laser Wavelength Drift | 45 pm/100mW** | ||
Beam Waist Diameter | 40 μm | 100 μm | |
M2 | 1.1 | 1.3 | 1.5 |
Pulse Energy | 75 nJ | 90 nJ | 105 nJ |
Pulse Duration | 80 ps | 90 ps | 110 ps |
Differential Efficiency | 10% | 20% | 25% |
Lasing Threshold | 70 mW | 90 mW | 110 mW |
Polarization Extinction Ratio | 30 | ||
frep | 20 kHz | 400 kHz | |
Pp (150mW) | 10 mW | 12 mW | 14 mW |
Pp (200mW) | 17 mW | 20 mW | 23 mW |
脈沖持續(xù)時(shí)間
脈沖頻譜
Dependency of the relative frequency jitter on the repetition rate fR
- Microchip激光芯片1064nm