反射模式微芯片
品牌： BATOP
型號： MC-1064-100ps
BATOP GmbH成立于2003年，是一家隸屬于德國耶拿大學的私人創(chuàng)新型公司。BATOP從事的專業(yè)領域包括：低溫分子束外延技術，介質濺射鍍膜，晶圓加工和芯片安裝技術。在過去幾年里， BATOP 已成為一個用于被動鎖模激光器的可飽和吸收體的供應商?？娠柡臀债a品集合了各式各樣的不同的器件，從可飽和吸收鏡(SAM?)，到可飽和輸出鏡(SOC)和用于透過應用的可飽和吸收體(SA)。迄今為止，可飽和吸收產品已經覆蓋了800nm到2.6μm的常用激光波長范圍。另一個產品系列是用于太赫茲發(fā)射和探測的太赫茲光電導天線(PCA)。BATOP不僅提供單帶隙天線，還包括整合了微透鏡的高能大狹縫交叉天線陣列和整套的太赫茲光譜儀。 太赫茲光電導天線的激發(fā)波長為800nm到1550nm之間。BATOP借助強大的研發(fā)能力來不斷提高自己的產品， 我們始終和客戶在一起，好的滿足他們的需求。
產品介紹
MC – 反射模式微芯片(Microchip in reflection mode)
- Nd:YVO4 laser crystal is bonded with a saturable absorber mirror (SAM).
- The laser output beam is in the reverse direction of the pump beam and must be separated from pump light by using a dichroitic mirror.
- The laser output is linear polarized with the polarization direction perpendicular to the groove in the copper heat sink.
Part No. | Delivery time | Description |
MC-1064-100ps | 1 week | Microchip in reflection mode |
微芯片參數：
MC-1064-100ps
Optical Pump Parameters
| Parameter at T=25°C | Min. | Typ. | Max. |
| Wavelength | 806nm | 808nm | 810nm |
| Pump Power | 70 | 150mW-200mW | 300mW |
| Pump Spot Diameter | 25μm | 40μm | 60μm |
| Fluorescent Lifetime | 35 μs (3%) | ||
| Pump Absorption @ 808nm | 85% | 90% | 95% |
| Pump Power Density | 5 kW/cm2 | 24 kW/cm2 * |
Lasing performance with 40μm pump spot size at 25°C
| Parameter at T=25°C | Min. | Typ. | Max. |
| Laser Wavelength | 1064.0nm | 1064.3nm | 1064.6nm |
| Laser Wavelength Drift | 50 pm/100mW** | ||
| Beam Waist Diameter | 60 μm | 100 μm | |
| M2 | 1.1 | 1.3 | 1.5 |
| Pulse Energy | 15 nJ | 18 nJ | 21 nJ |
| Pulse Duration | 70ps | 100ps | 130ps |
| Differential Efficiency | 8% | 10% | 13% |
| Laseing Thresold | 100 mW | 110 mW | 120 mW |
| Polarization Extinction Ratio | 100 | ||
| frep | 75 kHz | 700 kHz | |
| Pav (150mW) | 3,0 mW | 4,0 mW | 5,0 mW |
| Pav (200mW) | 7,5 mW | 9,0 mW | 10,5 mW |
The average output power P and the repetition frequency fR are a function of the optical pump power.These dependencies are nearly linear above the laser threshold. The jitter of the repetition frequencydecreases with increasing pump power to about 2 %, whereas the pulse energy EP remains constant?
Dependency of the average output power P on the pump power at 808 nm?
Dependency of the repetition rate frep on the pump power at 808 nm
Pulse duration tP
Pulse spectrum?
Dependency of the relative frequency jitter on the repetition rate fR
3.
- Microchip激光芯片1064nm
