NEW PRODUCTKODENSHI AUKSST3315R4Photo TransistorThe SST3315R4 is a high sensitivity NPN silicon phototransistor mounted in a black side looking package, compact, low profile and easy to mount.Dimensions (Unit:mm)Features• Low profile package• Compact• Low cost• Side looking plastic packageApplication• Photointerrupters• Optical switchesMAXIMUM RATINGS (Ta= 25℃)Item Symbol Rating UnitC-E voltage VCEO 30 VE-C voltage VECO 5 VCollector current IC 20 mACollector power dissipation PC 75 mWOperating temp. Topr. -25~+85 ℃Storage temp. Tstg. -40~+85 ℃Soldering temp. *1 Tsol. 260 ℃*1. Lead Soldering Temperature(3mm from case for 5sec)ELECTRO- OPTICAL CHARACTERISTICS (Ta= 25℃)Items Symbol Condition Min. Typ. Max. UnitCollector dark current Iceo VCEO=10V - 1 100 nALight current IL VCE=5V,EV=1000lx *2 2.0 - - mAC-E saturation voltage Vce(sat) IC=0.5mA,EV=2000lx *2 0.2 0.4 VSwitching speeds Rise time tr VCC=10V, IC=5mA, RL=100Ω - 3.2 μsecSwitching speeds Fall time tf - 4.8 - μsecSpectral sensitivity λ 840~1,050 nmPeak wavelength λp - 880 - nmHalf angle Δθ - ±30 - deg.*2. Irradiance by CIE standard light source A (2856K tungsten lamp)The contents of this data sheet are subject to change without advance notice for the purpose of improvement. When using this product, would you please refer to the latest specifications.Apr, 2014Photo TransistorSST3315R4