NEW PRODUCTKODENSHI AUKSST533R-04(N)Photo TransistorSST533R-04(N) is a high sensitivity NPN silicon phototransistor mounted in a Φ3 plastic package. It is compact and easy to mount.Dimensions (Unit:mm)Features• High output• Small Size (Φ3mm)• Visible ray cut off• RoHS ComplianceApplication• Photointerrupters• Optical detectors• Optical countersMAXIMUM RATINGS (Ta= 25℃)Item Symbol Rating UnitC-E voltage VCEO 30 VE-C voltage VECO 6 VCollector current IC 40 mACollector power dissipation PC 100 mWOperating temp. Topr. -30~+70 ℃Storage temp. Tstg. -40~+80 ℃Soldering temp. *1 Tsol. 260 ℃Note:*1. For MAX.5 seconds at the position of 2mm from the caseELECTRO- OPTICAL CHARACTERISTICS (Ta= 25℃)Items Symbol Condition Min. Typ. Max. UnitCollector dark current Iceo VCEO=10V - 1 10 nALight current IL VCE=5V,2×10?1w/cm2*2 380 490 - μAC-E saturation voltage Vce(sat) IC=0.5mA,4×10?1w/cm2*2 - - 0.4 VSwitching speeds Rise time tr VCC=10V, IC=1mA, RL=100Ω - 4.8 μsecSwitching speeds Fall time tf - 7.3 - μsecSpectral sensitivity λ 700~1,050 nmPeak wavelength λp - 880 - nmHalf angle Δθ - ±8 - deg.Note:*2. Irradiance by 850nm IRed light sourceThe contents of this data sheet are subject to change without advance notice for the purpose of improvement. When using this product, would you please refer to the latest specifications.Nov, 2014Photo TransistorSST533R-04(N)Collector current VsDark Current Vs