NEW PRODUCTKODENSHI AUKSST533R-02P(T)Photo TransistorSST533R-02P(T) is a high sensitivity NPN silicon phototransistor mounted in a Φ3 plastic package. It is compact and easy to mount.Dimensions (Unit:mm)Features• High output• Small Size (Φ3mm)• Visible ray cut off• RoHS ComplianceApplication• Photointerrupters• Optical detectors• Optical countersMAXIMUM RATINGS (Ta= 25℃)Item Symbol Rating UnitC-E voltage Vceo 85 VE-C voltage Veco 7 VCollector current Ic 45 mACollector power dissipation Pc 100 mWOperating temp. Topr. -40~+100 ℃Storage Temp. Tstg. -40~+100 ℃Soldering temp. *1 Tsol. 260 ℃Note: *1. For MAX.5 seconds at the position of 2mm from the caseELECTRO- OPTICAL CHARACTERISTICS (Ta= 25℃)Items Symbol Condition Min. Typ. Max. UnitCollector dark current Iceo Vceo=10V - 1 100 nALight current IL Vce=5V, 1,000lx *2 4.2 5.2 6.8 mAVce=5V,E_v=4.5*10?3W/cm2*3 80 103 130 μAC-E saturation voltage Vce(sat) Ic=0.5mA, 2,000lx *2 - - 0.3 VSwitching speeds Rise time tr Vcc=10V, Ic=5mA, RL=100Ω - 3.2 μsecSwitching speeds Fall time tf - 4.8 - μsecSpectral sensitivity λ 700~1,050 nmPeak wavelength λp - 880 - nmHalf angle Δθ ±35 ±40 ±45 deg.Note: *2. Irradiance by CIE standard light source A (2856K tungsten lamp)*3. Irradiance by IRed (λp=940nm)The contents of this data sheet are subject to change without advance notice for the purpose of improvement. When using this product, would you please refer to the latest specifications.Apr,2016