主要特性與技術(shù)指標(biāo)

適用于 高 k/SOI 脈沖 IV 表征的解決方案

精確的 Id-Vd 和 Id-Vg 測(cè)量

選通脈寬最小值是 10 ns，上升和下降時(shí)間為 2 ns

1 µs 電流測(cè)量分辨率

在直流測(cè)量和脈沖測(cè)量之間輕松切換

支持的分析儀：B1500A、E5270B、E5260A、E5262A、E5263A、4155/56C 和 4155/56B

描述

脈沖 IV 參數(shù)測(cè)試逐漸成為進(jìn)行半導(dǎo)體制程開發(fā)和半導(dǎo)體器件測(cè)試的一項(xiàng)常見要求。最近幾年，在更*制程不斷發(fā)展的推動(dòng)下，用戶對(duì)精確脈沖 IV 測(cè)量的需求不斷增加。為了滿足這些需求，是德科技推出了多種脈沖 IV 參數(shù)測(cè)試解決方案。它們提供更廣泛的脈寬、電壓/電流輸出和性能。

Keysight B1542A 10 ns 脈沖 IV 參數(shù)測(cè)試解決方案的脈寬范圍是 10 ns 至 1 ms，非常適合對(duì)采用高 k 柵介質(zhì)材料構(gòu)成的 MOSFET 或在 SOI 晶圓上裝配的 MOSFET 進(jìn)行表征。該脈沖 IV 解決方案允許您使用脈寬為 10 ns、上升和下降時(shí)間為 2 ns 的脈沖信號(hào)（速度非?？欤?，且信號(hào)的過沖和下沖非常低。

Main features and technical indicators

Optimal solution for high k/SOI pulse IV characterization

Accurate measurements of id-vd and id-vg

The minimum gate pulse width is 10 ns, and the rise and fall time is 2 ns

1 s current measurement resolution

Easy switching between dc measurement and pulse measurement

Supported analyzers: B1500A, E5270B, E5260A, E5262A, E5263A, 4155/56c and 4155/56b

describe

Pulse IV parameter testing is becoming a common requirement for semiconductor process development and semiconductor device testing. In recent years, the need for accurate pulse IV measurements has increased, driven by the development of more advanced processes. In order to meet these requirements, SDT has launched a variety of pulse IV parameter testing solutions. They provide a wider range of pulse widths, voltage/current outputs, and performance.

Keysight B1542A 10 ns pulse IV parameter test solution has a pulse width range of 10 ns to 1 ms, which is very suitable for the characterization of MOSFET made of high-k gate dielectric material or MOSFET assembled on SOI wafer. The pulse IV solution allows you to use pulses with a pulse width of 10 ns, a rise and fall time of 2 ns (very fast), and very low overshoot and downshoot of the signal.